Model/Brand/Package
Category/Description
Inventory
Price
Data
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Category: Zener diodeDescription: SILICON ZENER DIODE LOW NOISE 6.8V THRU 100V 0.25W(1/4W), 5% TOLERANCE3119
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Category: SCRthyristorDescription: MCC 系列 Dual 系列闸流晶体管 ### 认可 UL 认证组件 ### 闸流晶体管 - IXYS 闸流晶体管是一种固态半导体设备,具有四层交替的 N 型和 P 型材料。 它们充当双稳态开关,当它们的栅极接收到电流触发时发挥作用,并在处于正向偏压时继续发挥作用。 闸流晶体管与硅控整流器 (SCR) 同义。 带电气隔离底板的密封模块。 适合电池充电器、电焊机、电镀设备以及稳压电源、温度和速度控制电路等应用。3799
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Category: SCRthyristorDescription: MCD 系列闸流晶体管和二极管模块,IXYS 闸流晶体管/二极管配置 ### 认可 UL 认证组件 ### 闸流晶体管 - IXYS 闸流晶体管是一种固态半导体设备,具有四层交替的 N 型和 P 型材料。 它们充当双稳态开关,当它们的栅极接收到电流触发时发挥作用,并在处于正向偏压时继续发挥作用。 闸流晶体管与硅控整流器 (SCR) 同义。 带电气隔离底板的密封模块。 适合电池充电器、电焊机、电镀设备以及稳压电源、温度和速度控制电路等应用。8531
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Category: IGBTtransistorDescription: IGBT 模块,IXYS ### IGBT 分立元件和模块,IXYS 绝缘栅级双极性晶体管或 IGBT 是一种三端子功率半导体设备,以高效和快速切换著称。 IGBT 通过将用于控制输入的隔离栅极 FET 和用作开关的双极性功率晶体管组合在单个设备中,将 MOSFET 的简单栅极驱动特性与双极性晶体管的高电流和低饱和电压能力组合在一起。2628
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Category: SCRthyristorDescription: MCD95 系列 800 Vdrm 2 x 116 A 1.5 Vt 150 mA Igt 晶闸管模块 - TO-240 AA2826
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Category: Bipolar transistorDescription: 小信号 PNP 晶体管,60 至 160V,Fairchild Semiconductor ### 双极晶体管,Fairchild Semiconductor 双极性结点晶体管 (BJT) 板系列提供完整的解决方案,用于满足各种电路应用需求。 创新的封装设计用于提供最小尺寸、最高可靠性和最大热性能。9678
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Category: DIACBidirectional trigger diode, DIACDescription: 触发二极管, DIAC / SIDAC, 220 V, 250 V, 200 µA, DO-41 (DO-204AL), 2 引脚9708
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Category: IGBTtransistorDescription: Trans IGBT Module N-CH 600V 230A 730000mW 7Pin 34MM-1 Tray2626
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Category: IGBTtransistorDescription: IGBT modules, Infineon * * Infineon * * series IGBT modules provide low switching losses for switching frequencies up to 60 kHz. IGBT spans a series of power modules, such as ECONOPACK package, with open collector emitter voltage at 1200V; PrimePACK IGBT half bridge chopper module with NTC up to 1600/1700V. PrimePACK IGBT can be found in industrial, commercial, construction, and agricultural vehicles. The N-channel TRENCHSTOP TM and Fieldstop IGBT modules are suitable for both hard switching and soft switching applications, such as inverters, UPS, and industrial drives. Package types include: 62mm module, EasyPACK, EconoPACKTM2/EconoPACKTM3/EconoPACKTM4 # # # IGBT discrete parts and modules, Infineon insulated gate bipolar transistor or IGBT is a three terminal power semiconductor device known for its high efficiency and fast switching. IGBT combines the simple gate driving characteristics of MOSFETs with the high current and low saturation voltage capabilities of bipolar transistors by combining isolated gate FETs used for input control and bipolar power transistors used as switches in a single device.7431
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Category: TVSdiodeDescription: 500 Watt Peak Power MiniMOSORB Zener Transient Voltage Suppressors6548
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Category: Bipolar transistorDescription: Trans GP BJT PNP 200V 2A 1200mW Automotive 3Pin E-Line Box6812
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Category: Bipolar transistorDescription: Trans Darlington NPN 160V 1A 1000mW Automotive 3Pin E-Line Box4290
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Category: Bipolar transistorDescription: 2N3251 Series 40V 0.2A Through Hole PNP Silicon Transistor - TO-1893735+$29.285150+$28.0336200+$27.3328500+$27.15761000+$26.98232500+$26.78215000+$26.65707500+$26.5318
